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STM4460
S a mHop Microelectronics C orp.
Ver 1.0
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
40V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package.
ID
7A
RDS(ON) (m) Max
32 @ VGS=10V 45 @ VGS=4.5V
D D
5 6 7 8
4 3 2 1
G S S S
S O-8 1
D D
ABSOLUTE MAXIMUM RATINGS ( T A=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b a
TA=25C TA=70C
d
Limit 40 20 7 5.6 28 9
Units V V A A A mJ W W C
-Pulsed Single Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25C TA=70C
2.5 1.6 -55 to 150
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient
a
50
C/W
Details are subject to change without notice.
Jun,18,2008
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STM4460
Ver 1.0
ELECTRICAL CHARACTERISTICS ( TA=25 C unless otherwise noted )
Symbol Parameter Conditions
VGS=0V , ID=250uA VDS=32V , VGS=0V
Min 40
Typ
Max
Units V
OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current
VGS= 20V , VDS=0V
1 100
uA nA
ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance
VDS=VGS , ID=250uA VGS=10V , ID=7A VGS=4.5V , ID=6A VDS=10V , ID=7A
1
1.9 26 33 16
3 32 45
V m ohm m ohm S pF pF pF ns ns ns ns nC nC nC nC
DYNAMIC CHARACTERISTICS c Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge
c
VDS=20V,VGS=0V f=1.0MHz
635 95 55 11 12 17 11 11 5.1 1.7 3 7 0.98 1.3
VDD=20V ID=7A VGS=10V RGEN=3.3 ohm VDS=20V,ID=7A,VGS=10V VDS=20V,ID=6A,VGS=4.5V VDS=20V,ID=7A, VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage VGS=0V,IS=7A
A V
Notes
_ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,RG=25,VDD=20V.(See Figure13)
Jun,18,2008
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STM4460
Ver 1.0
30 VGS=4.5V VGS=10V 20
ID, Drain Current(A)
ID, Drain Current(A)
24 VGS=4V 18 VGS=3.5V
15
10 25 C 5 Tj=125 C -55 C 0
12
VGS=3V
6 VGS=2.5V 0 0 0.5 1 1.5 2 2.5 3
0
0.8
1.6
2.4
3.2
4.0
4.8
VDS, Drain-to-Source Voltage(V)
VGS, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
60 50 40 30 VGS=10V 20 10 1
Figure 2. Transfer Characteristics
1.5 1.4
RDS(on), On-Resistance Normalized
1.3 1.2 1.1 1.0 0.0
RDS(on)(m )
VGS=4.5V
VGS=4.5V ID=6A
VGS=10V ID=7A
1
6
12
18
24
30
0
25
50
75
100
125
150
T j ( C )
ID, Drain Current(A)
Tj, Junction Temperature( C )
Figure 3. On-Resistance vs. Drain Current and Gate Voltage
1.3
Figure 4. On-Resistance Variation with Drain Current and Temperature
BVDSS, Normalized Drain-Source Breakdown Voltage
1.3 ID=250uA 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150
Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75
VDS=VGS ID=250uA
100 125 150
Tj, Junction Temperature( C )
Tj, Junction Temperature( C )
Figure 5. Gate Threshold Variation with Temperature 3
Figure 6. Breakdown Voltage Variation with Temperature
Jun,18,2008
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STM4460
Ver 1.0
72 60 75 C
20.0
Is, Source-drain current(A)
ID=7A
10.0
25 C
RDS(on)(m )
48 125 C 36 25 C 24 12 0
125 C 75 C
0
2
4
6
8
10
1.0
0.2
0.5
0.8
1.1
1.4
1.7
VGS, Gate-to-Source Voltage(V)
VSD, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs. Gate-Source Voltage
900
Figure 8. Body Diode Forward Voltage Variation with Source Current
10
VGS, Gate to Source Voltage(V)
750
C, Capacitance(pF)
Ciss 600 450 300 150 0 0 Crss 5 10 15 20 25 30 Coss
8 6 4 2 0 0
VDS=20V ID=7A
2
4
6
8
10
12
14 16
VDS, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
220
60
) ON Li m it
1m 10 m s
10
s
TD(off )
ID, Drain Current(A)
Switching Time(ns)
100 60 10
10
R
0u
DS
(
s
Tr
TD(on) Tf
1
V G S =10V S ingle P ulse T c=25 C
DC
1 1
VDS=20V,ID=7A VGS=10V
0.1 60 100 300 600 0.1
6 10
1
10
100
Rg, Gate Resistance()
VDS, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jun,18,2008
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STM4460
Ver 1.0
15V
V ( BR )D S S
tp
VDS
L
D R IVE R
RG
20V
D .U .T
IA S tp
+ - VD D
A
0.0 1
IAS
Unclamped Inductive Test Circuit F igure 13a.
Unclamped Inductive Waveforms F igure 13b.
1
0.5
Normalized Transient Thermal Resistance
0.2
0.1
0.1 0.05 0.02 0.01 P DM
0.01
Single Pulse
1. 2. 3. 4.
t1 t2 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2
0.001 0.0000 1
0.000 1
0.001
0.01
0. 1
1
10
100
1000
Square Wave Pulse Duration(sec)
Figure 14. Normalized Thermal Transient Impedance Curve
Jun,18,2008
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STM4460
Ver 1.0
PACKAGE OUTLINE DIMENSIONS SO-8
1 L
E D
0.015X45
A
e
0.05 TYP.
B
0.016 TYP.
A1
0.008 TYP.
C
H
MILLIME T E R S S Y MB OLS MIN A A1 D E H L 1.35 0.10 4.80 3.81 5.79 0.41 0 MAX 1.75 0.25 4.98 3.99 6.20 1.27 8 MIN 0.053 0.004 0.189 0.150 0.228 0.016 0
INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8
Jun,18,2008
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STM4460
Ver 1.0
SO-8 Tape and Reel Data
SO-8 Carrier Tape
P1 D1 P2
A
E1 E2
B0
A0
D0
P0
A
TERMINAL NUMBER 1
T
SECTION A-A
K0
FEEDING DIRECTION
unit:
PACKAGE SOP 8N 150 A0
6.50 0.15
B0
5.25 0.10
K0
2.10 0.10
D0
1.5 (MIN)
D1
1.55 0.10
E
12.0 +0.3 - 0.1
E1
1.75 0.10
E2
5.5 0.10
E
P0
8.0 0.10
P1
4.0 0.10
P2
2.0 0.10
T
0.30 0.013
SO-8 Reel
W1
S G N
R H W
UNIT:
V
M
TAPE SIZE
12
REEL SIZE
330
M
330 1
N
62 1.5
W
12.4 + 0.2
W1
16.8 - 0.4
H
12.75 + 0.15
K
S
2.0 0.15
G
R
K V
Jun,18,2008
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